Industrial Memory

DDR4 SO‑DIMM

JEDEC-standard DDR4 small-outline memory module for platforms using a 260‑pin SO‑DIMM architecture. Published configurations cover 2666 and 3200 MHz at capacities up to 32 GB.

3200 MHzMaximum Data Rate
32 GBMaximum Capacity
1.2 VOperating Voltage
0–85 °COperating Temp. (TC)
SIMORCHIP industrial DDR4 SO-DIMM memory module
01

Technical Summary

Memory TechnologyDDR4
Module TypeSO‑DIMM, unbuffered
Capacity4 GB / 8 GB / 16 GB / 32 GB
Data Rate2666 / 3200 MHz
Operating Voltage1.2 V
Pin Count260‑pin
Bus Width64-bit, Non-ECC organization
Operating Temperature0 °C to 85 °C (TC)
02

Key Features

  • JEDEC-standard module design
  • Edge connector gold plating, 10 µin minimum
  • SPD programmed and verified in production
  • IQC, IPQC, FQC and OQC production quality control
  • RoHS / REACH / CE / FCC compliant
  • Limited Lifetime Warranty
03

Ordering Information

SIMORCHIP industrial ordering part numbers are listed below. Contact SIMORCHIP for configurations not listed.

Industrial Ordering Part Numbers

Ordering P/NCapacityData rateCLRankComponent compositionVoltageDatasheet
SMC04G8S4E324 GB3200 MHzCL221Rx8512M x 8, 8C1.2 VOn Request →
SMC08G8S4E268 GB2666 MHzCL191Rx81024M x 8, 8C1.2 VOn Request →
SMC08G8S4E328 GB3200 MHzCL221Rx81024M x 8, 8C1.2 VOn Request →
SMC08GFS4E328 GB3200 MHzCL222Rx8512M x 8, 16C1.2 VOn Request →
SMC16G8S4E3216 GB3200 MHzCL221Rx82048M x 8, 8C1.2 VOn Request →
SMC16GFS4E2616 GB2666 MHzCL192Rx81024M x 8, 16C1.2 VOn Request →
SMC16GFS4E3216 GB3200 MHzCL222Rx81024M x 8, 16C1.2 VOn Request →
SMC32GFS4E3232 GB3200 MHzCL222Rx82048M x 8, 16C1.2 VOn Request →

Each ordering part number has its own datasheet, available on request. Capacity, rank and component composition are stated per part number rather than per family.

04

Electrical & Timing Specifications

Data Rate2666 / 3200 MHz
CAS LatencyCL19 (2666) / CL22 (3200)
Operating Voltage1.2 V ± 60 mV
VPP2.5 V
Bus Width64-bit, Non-ECC organization
Rank × organization1Rx8 · 2Rx8, by part number
Refresh64 ms, 8192-cycle refresh at 0 °C to 85 °C
I/O1.2 V pseudo open-drain with on-die VREFDQ generation
SPDProgrammed to JEDEC standard
ECC TypeNon-ECC module
05

Mechanical Specifications

Form FactorSO‑DIMM
Pin Count260‑pin
Module Length69.6 mm ± 0.15 mm
Module Height30 mm ± 0.15 mm
PCB Construction10-layer
Edge ConnectorNickel underplating with a gold finish
Nickel Thickness100 µin minimum
Gold Thickness10 µin minimum
69.6 mm 30 mm 260‑pin SO‑DIMM
Outline drawn to scale. Dimensions in millimeters.
06

Environmental Specifications & Compliance

Operating Temperature0 °C to 85 °C (TC)
ComplianceRoHS · REACH · CE · FCC
StandardJEDEC
WarrantyLimited Lifetime Warranty

Operating temperature is specified as DRAM case temperature (TC).

07

Compatibility & Qualification

Check the DIMM socket, memory controller, board layout and firmware when selecting a module. Compatibility is verified on the target configuration according to the project requirements.

09

Production Verification

IQCIPQCFQCOQC

Production-level verification

  • Incoming, in-process, final and outgoing quality control
  • SPD programming and verification
  • Module functional verification before shipment

Project-level qualification

  • Target-platform compatibility verification
  • Stability verification under the defined operating conditions
  • Application-specific qualification where the program requires it

Production-level verification is part of the manufacturing flow. Project-level qualification is scoped per program.

12

Product Configuration Review

Provide the target platform architecture, required capacity, data rate, operating conditions and expected program lifecycle. SIMORCHIP engineering will review the applicable module configuration and qualification requirements.